RQ3G100GNTB N-Channel MOSFET, 10 A, 40 V RQ3G100GN, 8-Pin HSMT ROHM [RQ3G100GNTB]; 133-3295
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 40 V |
| Package Type | HSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 18.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 8.4 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Series | RQ3G100GN |
| Length | 3.3mm |
| Width | 3.1mm |
| Height | 0.85mm |