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About us Liên hệ Thông tin xuất hóa đơn cho Chánh Vinh Số tài khoản

Discrete Semiconductors

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Vishay PLZ12C-HG3_A/H 2186452
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Vishay, 12.35V Zener Diode 500 mW SMT 2-Pin MicroSMF (DO-219AC) [PLZ12C-HG3_A/H]; 218-6452

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Nominal Zener Voltage 12.35V Number of Elements per Chip 1 Mounting Type Surfac...

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Vishay PLZ12C-HG3_A/H 2186453
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Vishay, 12.35V Zener Diode 500 mW SMT 2-Pin MicroSMF (DO-219AC) [PLZ12C-HG3_A/H]; 218-6453

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Nominal Zener Voltage 12.35V Number of Elements per Chip 1 Mounting Type Surfac...

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Vishay PLZ11C-HG3_A/H 2186447
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Vishay, 11.38V Zener Diode 500 mW SMT 2-Pin MicroSMF (DO-219AC) [PLZ11C-HG3_A/H]; 218-6447

.THÔNG SỐ KỸ THUẬT: Nominal Zener Voltage 11.38V Diode Configuration Single Mounting Type Surface Mount Number of Elements per...

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Vishay PLZ10C-HG3_A/H 2186436
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Vishay, 10.2V Zener Diode 500 mW SMT 2-Pin MicroSMF (DO-219AC) [PLZ10C-HG3_A/H]; 218-6436

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Nominal Zener Voltage 10.2V Mounting Type Surface Mount Number of Elements per ...

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Vishay PLZ10A-HG3_A/H 2186432
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Vishay, 9.59V Zener Diode 500 mW SMT 2-Pin MicroSMF (DO-219AC) [PLZ10A-HG3_A/H]; 218-6432

.THÔNG SỐ KỸ THUẬT: Nominal Zener Voltage 9.59V Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surface...

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Infineon BBY5802VH6327XTSA1 2186283
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Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1 [BBY5802VH6327XTSA1]; 218-6283

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Number of Elements per Chip 1 Minimum Diode Capacitance 4.7pF Maximum Reverse V...

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Infineon TD280N16SOFHPSA1 2186330
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Infineon TD280N16SOFHPSA1, Thyristor Module 1600V, 280A 150mA [TD280N16SOFHPSA1]; 218-6330

.THÔNG SỐ KỸ THUẬT: Rated Average On-State Current 280A Repetitive Peak Reverse Voltage 1600V Maximum Gate Trigger Current 150mA ...

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Infineon BBY5502VH6327XTSA1 2186282
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Infineon BBY5502VH6327XTSA1 Varactor Diode, 6pF min, 16V, 2-Pin SC79 [BBY5502VH6327XTSA1]; 218-6282

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Number of Elements per Chip 1 Minimum Diode Capacitance 6pF Maximum Reverse Vol...

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Infineon TD280N16SOFHPSA1 2186331
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Infineon TD280N16SOFHPSA1, Thyristor Module 1600V, 280A 150mA [TD280N16SOFHPSA1]; 218-6331

.THÔNG SỐ KỸ THUẬT: Rated Average On-State Current 280A Repetitive Peak Reverse Voltage 1600V Maximum Gate Trigger Current 150mA ...

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Infineon BBY5802VH6327XTSA1 2186284
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Infineon BBY5802VH6327XTSA1 Varactor Diode, 4.7pF min, 10V, TSLP-2-1 [BBY5802VH6327XTSA1]; 218-6284

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Number of Elements per Chip 1 Minimum Diode Capacitance 4.7pF Maximum Reverse V...

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Infineon BBY5502VH6327XTSA1 2186281
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Infineon BBY5502VH6327XTSA1 Varactor Diode, 6pF min, 16V, 2-Pin SC79 [BBY5502VH6327XTSA1]; 218-6281

.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Number of Elements per Chip 1 Minimum Diode Capacitance 6pF Maximum Reverse Vol...

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STMicroelectronics RF3L05150CB4 2184819
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N-Channel MOSFET, 2.5 A, 90 V, 5-Pin LBB STMicroelectronics RF3L05150CB4 [RF3L05150CB4]; 218-4819

.THÔNG SỐ KỸ THUẬT: Channel Type N Maximum Continuous Drain Current 2.5 A Maximum Drain Source Voltage 90 V Package Type LBB ...

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STMicroelectronics RF3L05150CB4 2184818
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N-Channel MOSFET, 2.5 A, 90 V, 5-Pin LBB STMicroelectronics RF3L05150CB4 [RF3L05150CB4]; 218-4818

.THÔNG SỐ KỸ THUẬT: Channel Type N Maximum Continuous Drain Current 2.5 A Maximum Drain Source Voltage 90 V Package Type LBB ...

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STMicroelectronics STGIPQ4C60T-HZ 2184825
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STMicroelectronics STGIPQ4C60T-HZ IGBT, 6 A 600 V, 26-Pin N2DIP-26L type Z [STGIPQ4C60T-HZ]; 218-4825

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 6 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ...

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STMicroelectronics STGIPQ4C60T-HZ 2184824
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STMicroelectronics STGIPQ4C60T-HZ IGBT, 6 A 600 V, 26-Pin N2DIP-26L type Z [STGIPQ4C60T-HZ]; 218-4824

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 6 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ...

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Texas Instruments ULN2803ADWR 2184682
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Texas Instruments ULN2803ADWR Octal NPN Darlington Transistor, 500 mA 50 V, 18-Pin SOIC [ULN2803ADWR]; 218-4682

.THÔNG SỐ KỸ THUẬT: Transistor Type NPN Maximum Continuous Collector Current 500 mA Maximum Collector Emitter Voltage 50 V Pac...

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Texas Instruments ULN2803ADWR 2184683
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Texas Instruments ULN2803ADWR Octal NPN Darlington Transistor, 500 mA 50 V, 18-Pin SOIC [ULN2803ADWR]; 218-4683

.THÔNG SỐ KỸ THUẬT: Transistor Type NPN Maximum Continuous Collector Current 500 mA Maximum Collector Emitter Voltage 50 V Pac...

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Texas Instruments ULN2004ADR 2184680
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Texas Instruments ULN2004ADR, 7-element NPN Darlington Transistor, 500 mA 50 V, 16-Pin SOIC [ULN2004ADR]; 218-4680

.THÔNG SỐ KỸ THUẬT: Transistor Type NPN Maximum Continuous Collector Current 500 mA Maximum Collector Emitter Voltage 50 V Pac...

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Texas Instruments ULN2004ADR 2184681
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Texas Instruments ULN2004ADR, 7-element NPN Darlington Transistor, 500 mA 50 V, 16-Pin SOIC [ULN2004ADR]; 218-4681

.THÔNG SỐ KỸ THUẬT: Transistor Type NPN Maximum Continuous Collector Current 500 mA Maximum Collector Emitter Voltage 50 V Pac...

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Infineon IKY75N120CS6XKSA1 2184404
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Infineon IKY75N120CS6XKSA1 IGBT, 75 A 1200 V, 4-Pin TO-247 PLUS [IKY75N120CS6XKSA1]; 218-4404

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 75 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...

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Infineon IHW30N160R5XKSA1 2184398
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Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247 [IHW30N160R5XKSA1]; 218-4398

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1600 V Maximum Gate Emitter Voltag...

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Infineon IHW30N160R5XKSA1 2184399
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Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247 [IHW30N160R5XKSA1]; 218-4399

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1600 V Maximum Gate Emitter Voltag...

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Infineon IKW40N120CS6XKSA1 2184400
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Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247 [IKW40N120CS6XKSA1]; 218-4400

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...

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Infineon IKW40N120CS6XKSA1 2184401
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Infineon IKW40N120CS6XKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247 [IKW40N120CS6XKSA1]; 218-4401

.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...

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