Discrete Semiconductors
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Diode, 500mA 200V, 3-Pin TO-252GE [RFN5BGE2STL]; 223-6305
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
View full detailsDiode, 500mA 200V, 3-Pin TO-252GE [RF501BGE2STL]; 223-6292
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
View full detailsDiode, 500mA 600V, 3-Pin TO-252GE [RFN5BGE6STL]; 223-6306
.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 500mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
View full detailsDual Diode, 2x Common Cathode Pair, 600mA 200V, 3-Pin TO-252GE [RF601BGE2DTL]; 223-6296
.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 600mA Diode Configuration 2x Common Cathode Pair Mounting Type Surface Mount Numbe...
View full detailsDiode, 500mA 600V, 3-Pin TO-252GE [RF505BGE6STL]; 223-6294
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Mounting Type Surface Mount Number of Elements pe...
View full detailsDiode, 500mA 200V, 3-Pin TO-252GE [RF501BGE2STL]; 223-6293
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 500mA Number of Elements per Chip 1 Mounting Type Surfa...
View full detailsP-Channel MOSFET, 4 A, 60 V, 8-Pin DFN2020-8S [RF4L040ATTCR]; 223-6291
.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 4 A Maximum Drain Source Voltage 60 V Package Type DFN2020...
View full detailsDiode, 300mA 600V, 3-Pin TO-252GE [RF305BGE6STL]; 223-6286
.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 300mA Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surfa...
View full detailsP-Channel MOSFET, 70 A, 40 V, 3-Pin DPAK [RD3G07BATTL1]; 223-6279
.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 70 A Maximum Drain Source Voltage 40 V Package Type TO-252...
View full detailsSingle IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2DGC11]; 223-6327
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2HRC11]; 223-6320
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2DGC11]; 223-6326
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2GC11]; 223-6329
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 80 A 1200 V, 3-Pin TO-247N [RGS80TSX2GC11]; 223-6328
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DGC11]; 223-6315
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DGC11]; 223-6314
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 50 A 1200 V, 3-Pin TO-247N [RGS50TSX2GC11]; 223-6324
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2GC11]; 223-6319
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsP-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK [RD3G01BATTL1]; 223-6274
.THÔNG SỐ KỸ THUẬT: Channel Type P Maximum Continuous Drain Current 15 A Maximum Drain Source Voltage 40 V Package Type TO-252...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DHRC11]; 223-6316
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsSingle IGBT, 30 A 1200 V, 3-Pin TO-247N [RGS30TSX2DHRC11]; 223-6317
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 30 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsDiode, 800mA 600V, 3-Pin TO-252GE [RFV8BGE6STL]; 223-6313
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Maximum Forward Current 800mA Mounting Type Surface Mount Number of Elements pe...
View full detailsDiode, 1A 600V, 3-Pin TO-252 [RFV5BGE6STL]; 223-6311
.THÔNG SỐ KỸ THUẬT: Maximum Forward Current 1A Diode Configuration Single Number of Elements per Chip 1 Mounting Type Surface ...
View full detailsDual Diode, 2x Common Cathode Pair, 1A 600V, 3-Pin TO-252GE [RFN10BGE6STL]; 223-6301
.THÔNG SỐ KỸ THUẬT: Diode Configuration 2x Common Cathode Pair Maximum Forward Current 1A Mounting Type Surface Mount Number o...
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