Discrete Semiconductors
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N channel ;VBRDSS 200 V; RDSon 800 mOh [IRFD220PBF]; 180-8319
.THÔNG SỐ KỸ THUẬT:
IPD30N03S4L09ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon [IPD30N03S4L09ATMA1]; 826-9522
.THÔNG SỐ KỸ THUẬT: Channel Type N Maximum Continuous Drain Current 30 A Maximum Drain Source Voltage 30 V Package Type DPAK (...
View full detailsFDMC8030 Dual N-Channel MOSFET, 12 A, 40 V PowerTrench, 8-Pin Power 33 ON Semiconductor [FDMC8030]; 124-1389
THÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 0 Maximum Drain Source Voltage 40 V Package Type Power 33 Mountin...
View full detailsSOT-23 3 SNGL CPR PBF [BZX84C3V3LT1G]; 184-4206
.THÔNG SỐ KỸ THUẬT: Diode Configuration Single Nominal Zener Voltage 3.3V Mounting Type Surface Mount Number of Elements per C...
View full detailsON Semi 250V 200mA, Dual Diode, 3-Pin SOT-23 BAV23S [BAV23S]; 670-8791
THÔNG SỐ KỸ THUẬT Mounting Type Surface Mount Package Type SOT-23 Maximum Continuous Forward Current 200mA Peak Reverse Repetitive Vo...
View full detailsIRFU3410PBF N-Channel MOSFET, 31 A, 100 V HEXFET, 3-Pin IPAK Infineon [IRFU3410PBF]; 145-9346
THÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 31 A Maximum Drain Source Voltage 100 V Package Type IPAK (TO-251) ...
View full detailsDiodes Inc D1213A-04TS-7, Quad Uni-Directional TVS Diode Array, 6-Pin TSOT-26 [D1213A-04TS-7]; 169-0750
THÔNG SỐ KỸ THUẬT Diode Configuration Complex Array Direction Type Uni-Directional Maximum Clamping Voltage 17V Minimum Breakdown Vol...
View full detailsON Semiconductor SZNUP2105LT3G, Dual Bi-Directional TVS Diode, 350W, 3-Pin SOT-23 [SZNUP2105LT3G]; 781-5559
.THÔNG SỐ KỸ THUẬT: Diode Configuration Series Direction Type Bi-Directional Maximum Clamping Voltage 44V Minimum Breakdown Vo...
View full detailsON Semiconductor MMBZ6V8ALT1G, Dual Uni-Directional TVS Diode, 24W, 3-Pin SOT-23 [MMBZ6V8ALT1G]; 184-1275
THÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Common Anode Maximum Clamping Voltage 9.6V Minimum Breakdown Vol...
View full detailsVishay 1000V 1A, Diode, 2-Pin DO-204AL RGP10M-E3/73 [RGP10M-E3/73]; 170-8325
THÔNG SỐ KỸ THUẬT Diode Configuration Single Mounting Type Through Hole Number of Elements per Chip 1 Package Type DO-204AL Diode T...
View full detailsON Semi 600V 80A, Diode, 2-Pin TO-247 RURG8060 [RURG8060]; 124-1661
THÔNG SỐ KỸ THUẬT Mounting Type Through Hole Package Type TO-247 Maximum Continuous Forward Current 80A Peak Reverse Repetitive Volta...
View full detailsVishay, 8.1V Zener Diode 2% 500 mW Through Hole 2-Pin DO-35 [TZX8V2B-TR]; 818-5168
THÔNG SỐ KỸ THUẬT Diode Configuration Single Nominal Zener Voltage 8.1V Mounting Type Through Hole Number of Elements per Chip 1 Ma...
View full detailsBIP C77 NPN 3A 60V [2N4922G]; 184-4147
THÔNG SỐ KỸ THUẬT Transistor Type NPN Maximum DC Collector Current 1 (Continuous) A, 3 (Peak) A Maximum Collector Emitter Voltage 60 V ...
View full detailsVishay GBPC3502-E4/51, Bridge Rectifier, 35A 200V, 4-Pin GBPC [GBPC3502-E4/51]; 812-2303
.THÔNG SỐ KỸ THUẬT: Peak Average Forward Current 35A Bridge Type Single Phase Peak Reverse Repetitive Voltage 200V Mounting Ty...
View full detailsON Semi NZT902 NPN Transistor, 3 A, 90 V SOT-223 [NZT902]; 806-1286
.THÔNG SỐ KỸ THUẬT:
IRF3710ZPBF N-Channel MOSFET, 59 A, 100 V HEXFET, 3-Pin TO-220AB Infineon [IRF3710ZPBF]; 165-7604
THÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 59 A Maximum Drain Source Voltage 100 V Package Type TO-220AB Mou...
View full detailsEF Series Power MOSFET With Fast Body Di [SIHB22N60EF-GE3]; 188-4976
THÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 19 A Maximum Drain Source Voltage 600 V Package Type D2PAK (TO-263)...
View full detailsToshiba TTC5200(Q) NPN Bipolar Transistor, 15 A, 230 V, 3-Pin TO-3PL [TTC5200(Q)]; 756-3909
.THÔNG SỐ KỸ THUẬT: Transistor Type NPN Maximum DC Collector Current 15 A Maximum Collector Emitter Voltage 230 V Package Type...
View full detailsROHM RGT40TM65DGC9 P-Channel IGBT, 17 A 650 (Minimum) V, 3+Tab-Pin TO-220NFM [RGT40TM65DGC9]; 171-5441
.THÔNG SỐ KỸ THUẬT:
STMicroelectronics STGW40V60F IGBT, 40 A 600 V, 3-Pin TO-247 [STGW40V60F]; 791-7649
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V ...
View full detailsSTMicroelectronics 600V 2A, Diode, 2-Pin DO-214AA STTH2L06U [STTH2L06U]; 248-776
THÔNG SỐ KỸ THUẬT Mounting Type Surface Mount Package Type DO-214AA (SMB) Maximum Continuous Forward Current 2A Peak Reverse Repetiti...
View full detailsSTPSC6H065DLF, 650V SiC Schottky Diode [STPSC6H065DLF]; 201-0867
THÔNG SỐ KỸ THUẬT Mounting Type Surface Mount Package Type PowerFlat 8x8 HV Maximum Continuous Forward Current 6A Peak Reverse Repeti...
View full detailsIRLH5034TRPBF N-Channel MOSFET, 100 A, 40 V HEXFET, 8-Pin PQFN Infineon [IRLH5034TRPBF]; 168-6030
THÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 100 A Maximum Drain Source Voltage 40 V Package Type PQFN Mountin...
View full detailsIXYS 1200V 305A, Dual Diode, 3-Pin Y2 DCB MDD310-12N1 [MDD310-12N1]; 668-7142
THÔNG SỐ KỸ THUẬT Mounting Type Panel Mount Package Type Y2 DCB Maximum Continuous Forward Current 305A Peak Reverse Repetitive Volta...
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