Microchip SST39SF020A-70-4C-NHE, Parallel 2mb Flash Memory, 70ns; 5V, 32-Pin PLCC [SST39SF020A-70-4C-NHE]; 823-4501

SST39SF010A/020A/040 Parallel SuperFlash® Memory

The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features

4.5-5.5V Read and Write Operations

Endurance – 100,000 cycles (typical)

Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)

Sector-Erase Capability – Uniform 4 Kbyte sectors

Read Access Time – 55 to 70 ns

Sector-Erase Time 18 ms

Chip-Erase Time: 70 ms (typical)

Byte-Program Time – 14 μs (typical)

Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values)

Latched Address and Data

Automatic Write Timing – Internal VPP Generation

End-of-Write Detection – Toggle Bit – Data# Polling

TTL I/O Compatibility

JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Flash Memory, Microchip