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onsemi PowerTrench P-Channel MOSFET, 3.2 A, 150 V, 8-Pin Power 33 FDMC86259P [FDMC86259P]; 864-8228

Mã nhà sản xuất
FDMC86259P
Thương hiệu
Quy cách đóng gói
1 cái
Mã kho
8648228
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDMC86259P
Channel Type P
Maximum Continuous Drain Current 3.2A
Maximum Drain Source Voltage 150V
Series PowerTrench
Package Type Power 33
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 178mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 62W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Typical Gate Charge @ Vgs 22 nC @ 10 V
Length 3.4mm
Number of Elements per Chip 1
Width 3.4mm
Maximum Operating Temperature +150°C
Transistor Material Si
Height 0.75mm
Minimum Operating Temperature -55°C

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