Infineon F475R12KS4B11BOSA1, ECONO2 Dual Half Bridge IGBT Module, 100 A max, 1200 V, PCB Mount [F475R12KS4B11BOSA1]; 168-8761
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Configuration | Dual Half Bridge |
| Transistor Configuration | Dual Half Bridge |
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Channel Type | N |
| Mounting Type | PCB Mount |
| Package Type | ECONO2 |
| Pin Count | 24 |
| Switching Speed | 1MHz |
| Maximum Power Dissipation | 500 W |
| Dimensions | 107.5 x 45 x 17mm |
| Height | 17mm |
| Length | 107.5mm |
| Maximum Operating Temperature | +125 °C |
| Width | 45mm |
| Minimum Operating Temperature | -40 °C |