IGBTs
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N channel ;VBRDSS 500 V; RDSon 3000 mO [IRFR420APBF]; 180-8724
The Vishay IRFR420A is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having ...
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N channel ;VBRDSS 500 V; RDSon 520 mOh [IRFS11N50APBF]; 180-8349
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-sourc...
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STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247 [STGY50NC60WD]; 170-2164
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 110 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V ...
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N-Ch MOSFET 150V 95mohm @ 10V [SUD15N15-95-E3]; 180-7413
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 150V and maximum gate-sourc...
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STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) [STGB10NC60KDT4]; 168-7720
IGBT Discretes, STMicroelectronics THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 20 A Maximum Collector Emitter Voltage 600 V ...
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P-Ch MOSFET DPak (TO-252) 80V 29mohm @ 4 [SUD50P08-25L-E3]; 180-7935
Vishay MOSFET The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source ...
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N channel ;VBRDSS 500 V; RDSon 160 mOh [IRFP32N50KPBF]; 180-8335
Vishay MOSFET Features and Benefits Applications For these production packs, non-cancellable (NC), and non-returnable (NR) products, .THÔNG ...
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AEQC101 Qualified P-CHANNEL 60-V (D-S) 1 [SQM120P06-07L_GE3]; 180-7921
Vishay MOSFET The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source ...
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N channel ;VBRDSS 600 V; RDSon 1200 mO [IRFPC40PBF]; 180-8337
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-247AC-3 package is a new age product with a drain-source voltage of 600V and maximum gate-sou...
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P-Ch PowerPAK 1212-8 100V 113mohm @ 10V [SI7113DN-T1-GE3]; 180-7305
Vishay MOSFET Features and Benefits Certifications .THÔNG SỐ KỸ THUẬT:
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N channel ;VBRDSS 100 V; RDSon 540 mOh [IRLR110PBF]; 180-8833
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-sourc...
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N channel ;VBRDSS 600 V; RDSon 4400 mO [IRFBC20SPBF]; 180-8646
The Vishay IRFBC20S is a N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 20V. It is having ...
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Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS [GT15J341]; 168-7763
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 15 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
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N-Ch MOSFET D2Pak 100V 19.3mohm @ 10V [SUM90P10-19L-E3]; 180-7421
Vishay MOSFET The Vishay MOSFET is a P-channel, TO-263-3 package, is a new-age product with a drain-source voltage of 100V and maximum gate-sourc...
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N channel ;VBRDSS 100 V; RDSon 270 mOh [IRFU120PBF]; 180-8351
The Vishay IRFU120 is a N-channel power MOSFET having drain to source(Vds) voltage of 100V.The gate to source voltage(VGS) is 20V. It is having D...
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N channel ;VBRDSS 400 V; RDSon 550 mOh [IRFP340PBF]; 180-8662
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-247-3 package is a new age product with a drain-source voltage of 400V and maximum gate-sourc...
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N channel ;VBRDSS 500 V; RDSon 320 mOh [IRFB17N50LPBF]; 180-8312
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is havin...
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