IGBTs
Filters
N channel ;VBRDSS 60 V; RDSon -- mOhm [IRFD020PBF]; 180-8673
The Vishay IRFD020 is a N-channel power MOSFET having drain to source(Vds) voltage of 50V.The gate to source voltage(VGS) is 20V. It is having HV...
View full detailsSTMicroelectronics STGWT60H65FB IGBT, 80 A 650 V, 3-Pin TO-3P [STGWT60H65FB]; 829-4660
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 80 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
View full detailsSTMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247 [STGW30H60DFB]; 168-8808
IGBT Discretes, STMicroelectronics .THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 600...
View full detailsP channel ;VBRDSS -60 V; RDSon 280 mOh [IRF9Z24SPBF]; 180-8310
Vishay MOSFET The Vishay MOSFET is a P-channel, TO-263 package is a new age product with a drain-source voltage of 60V and maximum gate-source vo...
View full detailsE Series High Voltage Thin-Lead TO-220 F [SIHA22N60E-E3]; 180-7900
The Vishay SIHA22N60E is a E series N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 30V. It...
View full detailsPb- Free N-CHANNEL 60-V (D-S) MOSFET [SI7414DN-T1-E3]; 180-7315
Vishay MOSFET The Vishay surface mount N-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gat...
View full detailsN-Ch MOSFET D2Pak 80V 11.5mohm @ 10V [SUM110P08-11L-E3]; 180-7977
Vishay MOSFET The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source ...
View full detailsSTMicroelectronics STGW40V60F IGBT, 40 A 600 V, 3-Pin TO-247 [STGW40V60F]; 168-7007
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V ...
View full detailsSTMicroelectronics STGB30M65DF2 IGBT, 60 A 650 V, 3-Pin D2PAK (TO-263) [STGB30M65DF2]; 906-2785
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 650 V Maximum Gate Emitter Voltage ±20V ...
View full detailsSTMicroelectronics STGD25N40LZAG IGBT, 25 A 435 V, 3-Pin DPAK [STGD25N40LZAG]; 164-7033
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 25 A Maximum Collector Emitter Voltage 435 V Maximum Gate Emitter Voltage 16V ...
View full detailsN-Ch PowerPAK SO-8 BWL 100V 8.7mohm@10V [SIR882ADP-T1-GE3]; 180-7355
Vishay MOSFET The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate...
View full detailsSTMicroelectronics STGB20N40LZ IGBT, 25 A 425 V, 3-Pin D2PAK (TO-263) [STGB20N40LZ]; 792-5760
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 25 A Maximum Collector Emitter Voltage 425 V Maximum Gate Emitter Voltage...
View full detailsN channel ;VBRDSS 600 V; RDSon 1200 mO [IRFBC40APBF]; 180-8315
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 600V and maximum gate-sourc...
View full detailsSTMicroelectronics STGB20V60F IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263) [STGB20V60F]; 860-7555
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V ...
View full detailsSingle N-Ch PPAK SC70 30V with Schottky [SIA817EDJ-T1-GE3]; 180-7827
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual pl...
View full details150V N-Ch 0.052R [SUD25N15-52-E3]; 180-7416
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 150V and maximum gate-sourc...
View full detailsSTMicroelectronics STGWA40S120DF3 IGBT, 80 A 1200 V, 3-Pin TO-247 [STGWA40S120DF3]; 906-2833
.THÔNG SỐ KỸ THUẬT:
N channel ;VBRDSS 400 V; RDSon 550 mOh [IRFP340PBF]; 180-8336
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-247-3 package is a new age product with a drain-source voltage of 400V and maximum gate-sourc...
View full detailsN channel ;VBRDSS 100 V; RDSon 160 mOh [IRF530SPBF]; 180-8299
Vishay MOSFET The Vishay MOSFET is an N-channel, TO-263 package is a new age product with a drain-source voltage of 100V and maximum gate-source ...
View full detailsN channel ;VBRDSS 400 V; RDSon 550 mOh [IRF740ALPBF]; 180-8642
The Vishay IRF740AL is a N-channel power MOSFET having drain to source(Vds) voltage of 400V.The gate to source voltage(VGS) is 30V. It is having ...
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