BSL308PEH6327XTSA1 Dual P-Channel MOSFET, 2 A, 30 V OptiMOS P, 6-Pin TSOP Infineon [BSL308PEH6327XTSA1]; 165-5552
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Series | OptiMOS P |
| Height | 1mm |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 2.9mm |
| Width | 1.6mm |
| Forward Diode Voltage | 1.1V |
| Transistor Material | Si |