SI4435DYTRPBF P-Channel MOSFET, 8 A, 30 V Si4435DYPbF, 8-Pin SO Infineon [SI4435DYTRPBF]; 170-2264
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 35 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 4mm |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Series | Si4435DYPbF |
| Height | 1.5mm |