SPI11N65C3XKSA1 N-Channel MOSFET, 11 A, 650 V CoolMOS C3, 3-Pin I2PAK Infineon [SPI11N65C3XKSA1]; 857-8769
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 650 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.52mm |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
| Height | 9.45mm |
| Length | 10.36mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Series | CoolMOS C3 |