PMXB360ENEAZ 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 Nexperia [PMXB360ENEAZ]; 151-3045
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.1 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN1010D-3, SOT1215 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 887 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.7V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 6250 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 3 |
| Length | 1.15mm |
| Width | 1.05mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.4mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 3 nC |
| Automotive Standard | AEC-Q101 |