EM6M2T2R Dual N/P-Channel MOSFET, 400 mA, 20 V EM6M2, 6-Pin SOT-563 ROHM [EM6M2T2R]; 124-6575
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 400 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-563 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 4.8 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 150 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -10 V, -8 V, +8 V, +10 V |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 1.2V |
| Width | 1.3mm |
| Length | 1.7mm |
| Transistor Material | Si |
| Height | 0.45mm |
| Series | EM6M2 |
| Maximum Operating Temperature | +150 °C |