R6020ENJTL N-Channel MOSFET, 20 A, 600 V R6020ENJ, 2+Tab-Pin D2PAK ROHM [R6020ENJTL]; 172-0364
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | LPTS, TO-263 |
| Mounting Type | Surface Mount |
| Pin Count | 2 + Tab |
| Maximum Drain Source Resistance | 360 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 231 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 9.2mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Series | R6020ENJ |
| Length | 10.4mm |
| Maximum Operating Temperature | +150 °C |
| Height | 4.7mm |
| Forward Diode Voltage | 1.5V |