RQ3E180AJTB N-Channel MOSFET, 30 A, 30 V RQ3E180AJ, 8-Pin HSMT ROHM [RQ3E180AJTB]; 171-9853
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | HSMT |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±12 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 39 nC @ 4.5 V |
| Height | 0.85mm |
| Series | RQ3E180AJ |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Width | 3.1mm |
| Forward Diode Voltage | 1.2V |
| Length | 3.3mm |