Silicon carbide Power MOSFET 1200 V, 20 [SCT20N120H]; 201-4416
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | H2PAK-2 |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.203 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 239V |
| Number of Elements per Chip | 1 |
| Series | SiC MOSFET |
| Transistor Material | SiC |