STB18NM80 N-Channel MOSFET, 17 A, 800 V MDmesh, 3-Pin D2PAK STMicroelectronics [STB18NM80]; 168-7535
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 295 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 190 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 10.75mm |
| Series | MDmesh |
| Width | 10.4mm |
| Height | 4.6mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |