SSM6N35FE Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 Toshiba [SSM6N35FE]; 171-2408
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-563 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 20 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 150 mW |
| Maximum Gate Source Voltage | ±10 V |
| Number of Elements per Chip | 2 |
| Length | 1.2mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.55mm |
| Width | 1.6mm |