SI7904BDN-T1-GE3 Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay [SI7904BDN-T1-GE3]; 818-1419
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 45 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.45V |
| Maximum Power Dissipation | 17.8 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 3.15mm |
| Typical Gate Charge @ Vgs | 16 nC @ 8 V |
| Height | 1.07mm |
| Width | 3.15mm |