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Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3PN [GT30J341,Q(O]; 799-4867
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 59 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
View full detailsToshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65 [GT40QR21(STA1,E,D]; 756-0540
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsToshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P [GT40QR21,F(O]; 891-2743
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1200 V Maximum Gate Emitter Voltag...
View full detailsToshiba GT40T321,Q(O IGBT, 40 A 1500 V, 3-Pin TO-3PN [GT40T321,Q(O]; 756-0559
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1500 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P [GT40WR21,Q(O]; 891-2746
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1800 V Maximum Gate Emitter Voltag...
View full detailsToshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN [GT40WR21,Q(O]; 799-4864
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 40 A Maximum Collector Emitter Voltage 1800 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba GT50J322(Q) IGBT, 50 A 600 V, 3-Pin TO-3PLH [GT50J322(Q)]; 756-0552
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±20V ...
View full detailsToshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 168-7767
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
View full detailsToshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR21]; 796-5061
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 168-7768
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
View full detailsToshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P [GT50JR22]; 796-5064
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba GT50MR21,Q(O IGBT, 50 A 900 V, 3-Pin TO-3P [GT50MR21,Q(O]; 891-2759
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 50 A Maximum Collector Emitter Voltage 900 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P [GT50NR21,Q(O]; 891-2752
.THÔNG SỐ KỸ THUẬT:
Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH [GT60J323(Q)]; 184-521
.THÔNG SỐ KỸ THUẬT: Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage...
View full detailsToshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3P [GT60PR21,STA1F(S]; 891-2756
.THÔNG SỐ KỸ THUẬT:
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Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN [GT60PR21,STA1F(S]; 799-4889
Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN [GT60PR21,STA1F(S]; 799-4889
THÔNG SỐ KỸ THUẬT Maximum Continuous Collector Current 60 A Maximum Collector Emitter Voltage 1100 V Maximum Gate Emitter Voltage ±25V ...
View full detailsToshiba HG6 2.5 in 256 GB Industrial SSD Drive [THNSNJ256GCSY]; 111-2327
THÔNG SỐ KỸ THUẬT Hard Drive Type SSD Model HG6 Internal/External Internal Form Factor 2.5 in Industrial Yes Capacity 256 GB In...
View full detailsToshiba HG6 M.2 (2280) 128 GB SSD Drive [THNSNJ128G8NY]; 111-2330
THÔNG SỐ KỸ THUẬT Model HG6 Hard Drive Type SSD Internal/External Internal Form Factor M.2 (2280) Capacity 128 GB Interface SATA ...
View full detailsToshiba HN1A01F-GR(TE85L,F Dual PNP Bipolar Transistor, 150 mA, 50 V, 6-Pin SM [HN1A01F-GR(TE85L,F]; 756-0571
.THÔNG SỐ KỸ THUẬT: Transistor Type PNP Maximum DC Collector Current 150 mA Maximum Collector Emitter Voltage 50 V Package Typ...
View full detailsToshiba HN1A01F-Y(TE85L,F) Dual PNP Bipolar Transistor, 150 mA, 50 V, 6-Pin SM [HN1A01F-Y(TE85L,F)]; 756-0574
THÔNG SỐ KỸ THUẬT Transistor Type PNP Maximum DC Collector Current 150 mA Maximum Collector Emitter Voltage 50 V Package Type SM Mo...
View full detailsToshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363 [HN1A01FU-GR,LF(T]; 144-5302
THÔNG SỐ KỸ THUẬT Transistor Type PNP Maximum DC Collector Current 150 mA Maximum Collector Emitter Voltage 50 V Package Type SOT-363...
View full detailsToshiba HN1B01F-GR(TE85L,F Dual NPN + PNP Bipolar Transistor, 150 mA, 50 V, 6-Pin SM [HN1B01F-GR(TE85L,F]; 756-0578
.THÔNG SỐ KỸ THUẬT:
Toshiba HN1B04FU-Y(TE85L,F Dual NPN + PNP Bipolar Transistor, 150 mA, 50 V, 6-Pin US [HN1B04FU-Y(TE85L,F]; 756-0580
THÔNG SỐ KỸ THUẬT Transistor Type NPN + PNP Maximum DC Collector Current 150 mA Maximum Collector Emitter Voltage 50 V Package Type U...
View full detailsToshiba HN1C01F-GR(TE85L,F Dual NPN Bipolar Transistor, 150 mA, 50 V, 6-Pin SM [HN1C01F-GR(TE85L,F]; 756-0593
.THÔNG SỐ KỸ THUẬT: