DMN2016UTS-13 Dual N-Channel MOSFET, 8.6 A, 20 V, 8-Pin TSSOP Diodes Inc [DMN2016UTS-13]; 122-2875
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8.6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSSOP |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 16.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 880 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | +8 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Length | 4.5mm |
| Transistor Material | Si |
| Width | 3.1mm |
| Height | 1.025mm |
| Typical Gate Charge @ Vgs | 16.5 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |