DMN2023UCB4-7 Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc [DMN2023UCB4-7]; 165-8417
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 24 V |
| Package Type | X1-WLB1818 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 1.45 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Width | 1.8mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Forward Diode Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 29 nC @ 4.5 V |
| Height | 0.24mm |
| Length | 1.8mm |