DMT10H025SK3-13 N-Channel MOSFET, 32.9 (State) A, 41.2 (Steady) A, 100 V, 3 + Tab-Pin DPAK Diodes Inc [DMT10H025SK3-13]; 182-7458
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 32.9 (State) A, 41.2 (Steady) A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-252 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 6.2mm |
| Automotive Standard | AEC-Q101 |
| Typical Gate Charge @ Vgs | 21.4 nC @ 10V |
| Height | 2.26mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.7mm |
| Forward Diode Voltage | 1.3V |