DMT6018LDR-13 Dual N-Channel MOSFET, 11.4 (Steady) A, 9.1 (State) A, 60 V, 8-Pin V-DFN3030 Diodes Inc [DMT6018LDR-13]; 182-7493
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.1 (State) A, 11.4 (Steady) A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | V-DFN3030 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 26 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.9 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Width | 3.05mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.8mm |
| Typical Gate Charge @ Vgs | 13.9 nC @ 10V |
| Length | 3.05mm |
| Maximum Operating Temperature | +150 °C |