DMTH6016LSD-13 Dual N-Channel MOSFET, 7.6 A, 60 V DMT, 8-Pin SOIC Diodes Inc [DMTH6016LSD-13]; 146-4775
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7.6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 28 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.4 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Width | 3.95mm |
| Length | 4.95mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Typical Gate Charge @ Vgs | 17 @ 10 V nC |
| Height | 1.5mm |
| Series | DMT |
| Maximum Operating Temperature | +175 °C |