HY Electronic Corp HYG30P120H1K1, 3 Phase Bridge IGBT Module, 40 A max, 1200 V, Through Hole [HYG30P120H1K1]; 171-1416
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Configuration | 3 Phase Bridge |
| Transistor Configuration | 3 Phase |
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | 20V |
| Channel Type | N |
| Mounting Type | Through Hole |
| Pin Count | 24 |
| Maximum Power Dissipation | 200 W |
| Dimensions | 107.5 x 45 x 17mm |
| Height | 17mm |
| Length | 107.5mm |
| Maximum Operating Temperature | +123 °C |
| Minimum Operating Temperature | -40 °C |
| Width | 45mm |