BF999E6327HTSA1 N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon [BF999E6327HTSA1]; 826-9430
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 200 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 2.9mm |
| Transistor Material | Si |
| Typical Power Gain | 27 dB |
| Width | 1.3mm |
| Height | 0.9mm |
| Maximum Operating Temperature | +150 °C |