Infineon BFP640ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343 [BFP640ESDH6327XTSA1]; 145-8845
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 50 mA |
| Maximum Collector Emitter Voltage | 4.1 V |
| Package Type | SOT-343 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 110 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 4.8 V |
| Maximum Emitter Base Voltage | 0.5 V |
| Maximum Operating Frequency | 45 GHz |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Height | 0.9mm |
| Width | 1.25mm |
| Length | 2mm |
| Dimensions | 2 x 1.25 x 0.9mm |
| Transistor Material | SiGe |