Infineon BFS483H6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 6-Pin SOT-363 [BFS483H6327XTSA1]; 165-5852
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 65 mA |
| Maximum Collector Emitter Voltage | 12 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 450 mW |
| Minimum DC Current Gain | 70 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 20 V |
| Maximum Emitter Base Voltage | 2 V |
| Maximum Operating Frequency | 8 GHz |
| Pin Count | 6 |
| Number of Elements per Chip | 1 |
| Width | 1.25mm |
| Minimum Operating Temperature | -65 °C |
| Height | 0.8mm |
| Maximum Operating Temperature | +150 °C |
| Length | 2mm |
| Dimensions | 2 x 1.25 x 0.8mm |