BSC009NE2LSATMA1 N-Channel MOSFET, 100 A, 25 V OptiMOS, 8-Pin TSDSON Infineon [BSC009NE2LSATMA1]; 178-7504
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | TSDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 900 μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 96 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 1.1mm |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Width | 5.35mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Forward Diode Voltage | 1V |
| Length | 6.1mm |
| Maximum Operating Temperature | +150 °C |
| Series | OptiMOS |