BSC032NE2LSATMA1 N-Channel MOSFET, 84 A, 25 V OptiMOS, 8-Pin TDSON Infineon [BSC032NE2LSATMA1]; 133-6582
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 84 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 37 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 7.7 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Series | OptiMOS |
| Height | 1.1mm |
| Length | 5.35mm |
| Forward Diode Voltage | 1V |