BSD840NH6327XTSA1 Dual N-Channel MOSFET, 880 mA, 20 V OptiMOS 2, 6-Pin SOT-363 Infineon [BSD840NH6327XTSA1]; 145-8818
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 880 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 560 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.75V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Width | 1.25mm |
| Height | 0.8mm |
| Transistor Material | Si |
| Series | OptiMOS 2 |
| Length | 2mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 0.26 nC @ 2.5 V |