BSL316CH6327XTSA1 Dual N/P-Channel MOSFET, 1.4 A, 1.5 A, 30 V OptiMOS, 6-Pin PG-TDSOP Infineon [BSL316CH6327XTSA1]; 166-1082
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.4 A, 1.5 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PG-TDSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 270 mΩ, 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Width | 1.6mm |
| Length | 2.9mm |
| Typical Gate Charge @ Vgs | 0.6 nC @ 5 V, 2.4 nC @ 5 V |
| Height | 1mm |
| Series | OptiMOS |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.1V |