BSO615CGHUMA1 N/P-Channel MOSFET, 2 A, 3.1 A, 60 V SIPMOS, 8-Pin DSO Infineon [BSO615CGHUMA1]; 826-9216
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2 A, 3.1 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DSO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 150 mΩ, 450 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 13.5 nC @ 10 V, 15 nC @ 10 V |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.45mm |
| Series | SIPMOS |