BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3+Tab-Pin SOT-223 Infineon [BSP149H6327XTSA1]; 354-5720
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 660 mA |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 1.8 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 1.6mm |
| Series | SIPMOS |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Width | 3.5mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 11 nC @ 5 V |