BSP171PH6327XTSA1 P-Channel MOSFET, 1.9 A, 60 V SIPMOS, 3+Tab-Pin SOT-223 Infineon [BSP171PH6327XTSA1]; 167-942
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 6.5mm |
| Width | 3.5mm |
| Maximum Operating Temperature | +150 °C |
| Series | SIPMOS |
| Height | 1.6mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |