BSS192PH6327FTSA1 P-Channel MOSFET, 190 mA, 250 V SIPMOS, 3-Pin SOT-89 Infineon [BSS192PH6327FTSA1]; 145-9451
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 190 mA |
| Maximum Drain Source Voltage | 250 V |
| Package Type | SOT-89 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 2.5mm |
| Height | 1.5mm |
| Series | SIPMOS |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Length | 4.5mm |
| Typical Gate Charge @ Vgs | 4.9 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |