BSS606NH6327XTSA1 N-Channel MOSFET, 3.2 A, 60 V OptiMOS 3, 4-Pin PG-SOT-89 Infineon [BSS606NH6327XTSA1]; 110-7170
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | PG-SOT-89 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 4.5mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
| Maximum Operating Temperature | +150 °C |
| Series | OptiMOS 3 |
| Width | 2.5mm |
| Height | 1.5mm |
| Forward Diode Voltage | 1.1V |