BSS806NEH6327XTSA1 N-Channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23 Infineon [BSS806NEH6327XTSA1]; 165-5871
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.3 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 82 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.75V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Width | 1.3mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | OptiMOS 2 |
| Maximum Operating Temperature | +150 °C |
| Length | 2.9mm |
| Typical Gate Charge @ Vgs | 1.7 nC @ 2.5 V |
| Height | 1mm |