BSZ086P03NS3EGATMA1 P-Channel MOSFET, 40 A, 30 V OptiMOS P, 8-Pin TSDSON Infineon [BSZ086P03NS3EGATMA1]; 165-6879
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.9V |
| Minimum Gate Threshold Voltage | 3.1V |
| Maximum Power Dissipation | 69 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Length | 3.4mm |
| Maximum Operating Temperature | +150 °C |
| Series | OptiMOS P |
| Height | 1.1mm |
| Transistor Material | Si |
| Width | 3.4mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 43.2 nC @ 10 V |