BSZ12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V OptiMOS 3, 8-Pin TSDSON Infineon [BSZ12DN20NS3GATMA1]; 165-6894
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.3 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TSDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | OptiMOS 3 |
| Width | 3.4mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Height | 1.1mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V |
| Length | 3.4mm |