Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263) [IGB30N60H3ATMA1]; 166-1187
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 187 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Length | 10.31mm |
| Width | 9.45mm |
| Height | 4.57mm |
| Dimensions | 10.31 x 9.45 x 4.57mm |
| Minimum Operating Temperature | -40 °C |
| Energy Rating | 1.55mJ |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 1630pF |