Infineon IKZ50N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247 [IKZ50N65ES5XKSA1]; 162-3332
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 274 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 40kHz |
| Transistor Configuration | Single |
| Length | 15.9mm |
| Width | 5.1mm |
| Height | 22.5mm |
| Dimensions | 15.9 x 5.1 x 22.5mm |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 1.65 |
| Gate Capacitance | 3100pF |
| Minimum Operating Temperature | -40 °C |