IPA60R650CEXKSA1 N-Channel MOSFET, 9.9 A, 650 V CoolMOS CE, 3-Pin TO-220FP Infineon [IPA60R650CEXKSA1]; 145-9178
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.9 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 650 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 63 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Series | CoolMOS CE |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 20.5 nC @ 10 V |
| Width | 4.9mm |
| Height | 16.15mm |
| Minimum Operating Temperature | -40 °C |
| Forward Diode Voltage | 0.9V |
| Length | 10.65mm |