IPA65R650CEXKSA1 N-Channel MOSFET, 10.1 A, 650 V CoolMOS, 3+Tab-Pin TO-220FP Infineon [IPA65R650CEXKSA1]; 133-9810
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10.1 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 86 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Length | 10.65mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 0.9V |
| Minimum Operating Temperature | -40 °C |
| Series | CoolMOS |
| Width | 4.9mm |
| Height | 16.15mm |