IPB042N10N3GATMA1 N-Channel MOSFET, 100 A, 100 V OptiMOS 3, 3-Pin D2PAK Infineon [IPB042N10N3GATMA1]; 124-8768
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 214 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 10.31mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS 3 |
| Height | 4.57mm |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V |
| Width | 9.45mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |