IPB180P04P4L02ATMA1 P-Channel MOSFET, 180 A, 40 V OptiMOS P, 7-Pin D2PAK Infineon [IPB180P04P4L02ATMA1]; 166-1130
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 3.9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 9.25mm |
| Forward Diode Voltage | 1.3V |
| Length | 10mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS P |
| Typical Gate Charge @ Vgs | 220 nC @ 10 V |
| Height | 4.4mm |
| Transistor Material | Si |