IPB65R660CFDATMA1 N-Channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK Infineon [IPB65R660CFDATMA1]; 165-8271
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 700 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 660 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 9.45mm |
| Height | 4.57mm |
| Series | CoolMOS CFD |
| Length | 10.31mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 22 nC |
| Minimum Operating Temperature | -55 °C |