IPB80N06S4L05ATMA2 N-Channel MOSFET, 80 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB80N06S4L05ATMA2]; 165-5607
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 107 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Length | 10mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS T2 |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Width | 9.25mm |
| Height | 4.4mm |